| PART |
Description |
Maker |
| TC59SM816BFT-70 TC59SM808BFT-75 TC59SM808BFTL-75 T |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
| M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S40BTP-8L M2V64S30BTP-8L M2V64S40BTP-7L M2V64 |
64M bit Synchronous DRAM 6400位同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M2V64S20DTP M2V64S20DTP-6 M2V64S20DTP-6L M2V64S20D |
64M Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B- |
64M-bit Synchronous DRAM 4-bank LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life
64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| 967598-1 |
MODU II PIN HEADER , 32 POS. MODU II Stiftwanne , 32 pol
|
Tyco Electronics
|
